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sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 1 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n- and p-channel 40 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? aec-q101 qualified d ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr4 material). d. parametric verification ongoing. e. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak so-8l. the end of the lead terminal is exposed co pper (not plated) as a result of the singulation process in manufacturing. a solder fill et at the exposed copper tip cannot be guaranteed and is not r equired to ensure adequate bottom side solder interconnection. f. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. product summary n-channel p-channel v ds (v) 40 - 40 r ds(on) ( ? ) at v gs = 10 v 0.014 0.028 r ds(on) ( ? ) at v gs = 4.5 v 0.015 0.042 i d (a) 8 - 8 configuration n & p pair 4 3 2 1 6.15 mm 5.13 mm bottom view powerpak ? so-8l dual g 2 s 2 g 1 s 1 d 2 d 1 n-channel mosfet d 1 g 1 s 1 s 2 g 2 d 2 p-channel mosfet ordering information package powerpak so-8 lead (pb)-free and halo gen-free SQJ500EP-T1-GE3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol n- channel p-channel unit drain-source voltage v ds 40 - 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 8- 8 a t c = 125 c 8 - 8 continuous source curr ent (diode conduction) a i s 8- 8 pulsed drain current b i dm 32 - 32 single pulse avalanche current l = 0.1 mh i as 30 - 30 single pulse avalanche energy e as 45 45 mj maximum power dissipation b t c = 25 c p d 48 48 w t c = 125 c 16 16 operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol n-channel p-channel unit junction-to-ambient pcb mount c r thja 85 85 c/w junction-to-case (drain) r thjc 3.1 3.1
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 2 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 40 - - v v gs = 0 v, i d = - 250 a p-ch - 40 - - gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1.5 2 2.5 v ds = v gs , i d = - 250 a p-ch - 1.5 - 2 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v n-ch - - 100 na p-ch - - 100 zero gate voltage drain current i dss v gs = 0 v v ds = 40 v n-ch - - 1 a v gs = 0 v v ds = - 40 v p-ch - - - 1 v gs = 0 v v ds = 40 v, t j = 125 c n-ch - - 50 v gs = 0 v v ds = - 40 v, t j = 125 c p-ch - - - 50 v gs = 0 v v ds = 40 v, t j = 175 c n-ch - - 150 v gs = 0 v v ds = - 40 v, t j = 175 c p-ch - - - 150 on-state drain current a i d(on) v gs = 10 v v ds ?? 5 v n-ch 25 - - a v gs = - 10 v v ds ?? 5 v p-ch - 25 - - drain-source on-state resistance a r ds(on) v gs = 10 v i d = 8 a n-ch - 0.011 0.014 ? v gs = - 10 v i d = - 8 a p-ch - 0.022 0.028 v gs = 10 v i d = 8 a, t j = 125 c n-ch - - 0.017 v gs = - 10 v i d = - 8 a, t j = 125 c p-ch - - 0.041 v gs = 10 v i d = 8 a, t j = 175 c n-ch - - 0.025 v gs = - 10 v i d = - 8 a, t j = 175 c p-ch - - 0.049 v gs = 4.5 v i d = 6 a n-ch - 0.012 0.015 v gs = - 4.5 v i d = - 6 a p-ch - 0.033 0.042 forward transconductance b g fs v ds = 15 v, i d = 8 a n-ch - 40 - s v ds = - 15 v, i d = - 8 a p-ch - 18 - dynamic b input capacitance c iss v gs = 0 v v ds = 20 v, f = 1 mhz n-ch - 1799 2248 pf v gs = 0 v v ds = - 20 v, f = 1 mhz p-ch - 1756 2195 output capacitance c oss v gs = 0 v v ds = 20 v, f = 1 mhz n-ch - 282 352 v gs = 0 v v ds = - 20 v, f = 1 mhz p-ch - 296 370 reverse transfer capacitance c rss v gs = 0 v v ds = 20 v, f = 1 mhz n-ch - 109 136 v gs = 0 v v ds = - 20 v, f = 1 mhz p-ch - 208 260 total gate charge c q g v gs = 10 v v ds = 20 v, i d = 10 a n-ch - 31.5 48 nc v gs = - 10 v v ds = - 20 v, i d = - 10 a p-ch - 41.5 63 gate-source charge c q gs v gs = 10 v v ds = 20 v, i d = 10 a n-ch - 5.7 - v gs = - 10 v v ds = - 20 v, i d = - 10 a p-ch - 5.5 - gate-drain charge c q gd v gs = 10 v v ds = 20 v, i d = 10 a n-ch - 4.8 - v gs = - 10 v v ds = - 20 v, i d = - 10 a p-ch - 10.5 - gate resistance r g f = 1 mhz n-ch 2.0 4.11 6.2 ? p-ch 3.1 6.3 9.5
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 3 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit turn-on delay time c t d(on) v dd = 20 v, r l = 2 ? i d ? 10 a, v gen = 10 v, r g = 1 ? n-ch - 7 11 ns v dd = - 20 v, r l = 2 ? i d ? - 10 a, v gen = - 10 v, r g = 1 ? p-ch - 11 17 rise time c t r v dd = 20 v, r l = 2 ? i d ? 10 a, v gen = 10 v, r g = 1 ? n-ch - 21 32 v dd = - 20 v, r l = 2 ? i d ? - 10 a, v gen = - 10 v, r g = 1 ? p-ch - 9 14 turn-off delay time c t d(off) v dd = 20 v, r l = 2 ? i d ? 10 a, v gen = 10 v, r g = 1 ? n-ch - 33 50 v dd = - 20 v, r l = 2 ? i d ? - 10 a, v gen = - 10 v, r g = 1 ? p-ch - 55 83 fall time c t f v dd = 20 v, r l = 2 ? i d ? 10 a, v gen = 10 v, r g = 1 ? n-ch - 19 29 v dd = - 20 v, r l = 2 ? i d ? - 10 a, v gen = - 10 v, r g = 1 ? p-ch - 91 137 source-drain diode ratings and characteristics b pulsed current a i sm n-ch - - 32 a p-ch - - - 32 forward voltage v sd i s = 4 a n-ch - 0.79 1.2 v i s = - 4 a p-ch - - 0.82 - 1.2
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 4 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = - 55 c t c = 125 c 0.000 0.005 0.010 0.015 0.020 0.025 0 8 16 24 32 40 r d s (on) -on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 16 32 48 64 80 0 5 10 15 20 25 g f s -tran s conductance ( s ) i d -drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 500 1000 1500 2000 2500 0 8 16 24 32 40 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 5 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 8 16 24 32 40 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) i d = 10 a v d s = 20 v 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -1.5 -1.1 -0.7 -0.3 0.1 0.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 8 a v gs = 4.5 v v gs = 10 v 0.00 0.02 0.04 0.06 0.08 0.10 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 39 41 43 45 47 49 51 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 6 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel typical characteristics (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 m s , 1 s , 10 s , dc i d limited 10 - 3 10 - 2 1 10 600 10 - 1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r th j a = 85 c/w 3. t jm - t a = p dm z th j a (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 7 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10 - 3 10 - 2 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.02
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 8 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 5 v v gs = 3 v v gs = 4 v 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = - 55 c t c = 125 c 0.00 0.02 0.04 0.06 0.08 0.10 0 10 20 30 40 50 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 6 12 18 24 30 0 5 10 15 20 25 g f s -tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 600 1200 1800 2400 3000 0 8 16 24 32 40 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 9 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 10 20 30 40 50 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) i d = 10 a v d s = 20 v 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -0.5 -0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 8 a v gs gs = 10 v 0.00 0.03 0.06 0.09 0.12 0.15 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c -51 -49 -47 -45 -43 -41 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 10 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel typical characteristics (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 m s , 1 s , 10 s , dc i d limited 10 - 3 10 - 2 1 10 600 10 - 1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r th j a = 85 c/w 3. t jm - t a = p dm z th j a (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
sqj500ep www.vishay.com vishay siliconix s11-1733-rev. a, 29-aug-11 11 document number: 67517 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67517 . 10 - 3 10 - 2 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.02
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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